Review of MOSFET resonant gate drive circuit research

被引：0
|
作者：
Zhao Q. [1 ]
Guo J. [1 ]
Yuan J. [1 ]
Chen L. [1 ]
Cui S. [1 ]
机构：
[1] Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao
来源：
| 2018年 / Electric Power Automation Equipment Press卷 / 38期
关键词：
Drive loss; Gate drive; High frequency converter; MOSFET; Resonant gate drive;
D O I：
10.16081/j.issn.1006-6047.2018.10.011
中图分类号：
学科分类号：
摘要：
Resonant gate drive circuit can reduce the driving loss of MOSFET at high frequency. Firstly, the tradi-tional voltage source driver and its problems are introduced, and then the resonant drive technology is introduced. The current topologies of resonant gate drive circuits are summarized and divided into three types: current source prototype, resonant prototype and coupled inductor prototype. The advantages and disadvantages of the current source prototype and resonant prototype proposed earlier are respectively introduced, and compared with the later development of various topologies. The coupled inductor prototype is adding coupled inductor to current source prototype or resonant prototype for energy transmission, which also increases the complexity of the topology. Considering the complexity of the resonant gate drive circuits, the topology components are integrated into a chip to achieve optimization. © 2018, Electric Power Automation Equipment Press. All right reserved.
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页码：66 / 73and107
相关论文
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