Miniband effects in short-period InGaAs

被引:0
|
作者
Pusep, Y. A. [1 ]
de Giovanni Rodrigues, A. [2 ]
Galzerani, J. C. [2 ]
Cornet, D. M. [3 ]
Comedi, D. [3 ]
机构
[1] Univ Sao Paulo, Inst Fis Sao Carlos, CP 369, BR-13460970 Sao Carlos, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil
[3] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L8, Canada
来源
基金
加拿大自然科学与工程研究理事会; 巴西圣保罗研究基金会;
关键词
superlattices; Raman scattering; localization;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The formation of the miniband electron energy structure and its effect on optical vibrational modes were explored in doped InGaAs/InP superlattices with different periods. The analysis of the high resolution x-ray diffraction and Raman data allowed us to conclude that in spite of the defect structure of the layers constituting the superlattices, their super-periodicity was well defined. The quantitative proof of the conditions for break-down of the Raman selection rules is presented. No Raman selection rules were observed for the longitudinal optical phonons in long-period superlattices. In short-period superlattices the emergence of the selection rules of the coupled plasmon-LO phonon vibrations was demonstrated to occur due to the increase of their coherence lengths.
引用
收藏
页码:385 / +
页数:2
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