Interface roughness in short-period InGaAs/InP superlattices

被引：9

作者：

Pusep, Yu. A. ^{[1
]}

Gozzo, G. C. ^{[1
]}

LaPierre, R. R. ^{[2
]}

机构：

[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil

[2] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

基金：

加拿大自然科学与工程研究理事会; 巴西圣保罗研究基金会;

关键词：

electron mobility; gallium arsenide; III-V semiconductors; indium compounds; interface roughness; semiconductor superlattices;

D O I：

10.1063/1.3050531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness.

引用

页数：3

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