FLOW MODULATION EPITAXY OF SHORT-PERIOD GAINAS/INP SUPERLATTICES

被引：0
|
作者：
EMERSON, DT
WHITTINGHAM, KL
SHEALY, JR
机构：
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Flow Modulation Epitaxial growth of short period GaInAs/InP superlattices was investigated. Superlattice quality was assessed by Double Crystal X-Ray Diffraction, room and low temperature Photoluminescence, Raman Scattering, and Atomic Force Microscopy. Growth of bulk GaInAs, single GaInAs quantum wells, and GaInAs/InP superlattices (including results on the shortest period, high quality GaInAs/InP superlattices prepared to date by OMVPE) are presented. Finally, a qualitative model relating accumulated interface roughness and preferential Group III incorporation during GaInAs nucleation is presented.
引用
收藏
页码：155 / 160
页数：6
相关论文
共 50 条
  • [1] Lateral composition modulation in strain compensated (GaInP)m(GaInAs)m short-period superlattices grown on (001) InP by atomic layer molecular beam epitaxy
    Golmayo, D
    Dotor, ML
    Quintana, C
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 167 - 173
  • [2] Structural investigation of short period GaInAs/InP superlattices
    Emerson, DT
    Shealy, JR
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (03) : 383 - 385
  • [3] Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy
    Song, JD
    Ok, YW
    Kim, JM
    Lee, YT
    Seong, TY
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) : 5086 - 5089
  • [4] GROWTH OF GAINP/GAASP SHORT-PERIOD SUPERLATTICES BY FLOW MODULATION ORGANOMETALLIC VAPOR-PHASE EPITAXY
    WHITTINGHAM, KL
    EMERSON, DT
    SHEALY, JR
    MATRAGRANO, MJ
    AST, DG
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1611 - 1615
  • [5] Short-period GaInAs/InP superlattice for distributed Bragg reflector
    Ishida, Syuutarou
    Miyamoto, Tomoyuki
    Koyama, Fumio
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28): : L723 - L725
  • [6] Interface roughness in short-period InGaAs/InP superlattices
    Pusep, Yu. A.
    Gozzo, G. C.
    LaPierre, R. R.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (24)
  • [7] INAS/INP SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY ATOMIC LAYER EPITAXY
    SAKUMA, Y
    OZEKI, M
    KODAMA, K
    OHTSUKA, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 324 - 327
  • [8] Electron and hole scattering in short-period InGaAs/InP superlattices
    Pusep, Yu. A.
    Gold, A.
    Mamani, N. C.
    de Godoy, M. P. F.
    Galvao Gobato, Y.
    LaPierre, R. R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
  • [9] ATOMIC LAYER EPITAXY OF CDSE/ZNSE SHORT-PERIOD SUPERLATTICES
    MATSUMOTO, T
    IWASHITA, T
    SASAMOTO, K
    KATO, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 63 - 67
  • [10] GROWTH PARAMETER OPTIMIZATION OF SHORT-PERIOD (LESS-THAN-50-ANGSTROM INGAAS/INP SHORT SHORT-PERIOD SUPERLATTICES BY CHEMICAL BEAM EPITAXY FOR PHOTONIC DEVICES
    RIGO, C
    ANTOLINI, A
    CACCIATORE, C
    CORIASSO, C
    LAZZARINI, L
    SALVIATI, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 293 - 296
12345