Electron and hole scattering in short-period InGaAs/InP superlattices

The combination of photoluminescence and magneto-transport measurements is used to study the single-particle relaxation time and the transport scattering time in short-period InGaAs/InP superlattices. Both the single-particle relaxation times of the electrons and of the holes were obtained in the same samples and were shown to be determined by the remote-impurity scattering. The transport scattering time for electrons was found to be dominated by the interface-roughness scattering with lateral length A = 10 nm and height Delta =0.13 nm. We also discuss the importance of multiple-scattering effects for small well widths and of alloy scattering for large well widths. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3646365]