Interface roughness in short-period InGaAs/InP superlattices

被引：9
|
作者：
Pusep, Yu. A. [1 ]
Gozzo, G. C. [1 ]
LaPierre, R. R. [2 ]
机构：
[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
[2] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期
基金：
加拿大自然科学与工程研究理事会; 巴西圣保罗研究基金会;
关键词：
electron mobility; gallium arsenide; III-V semiconductors; indium compounds; interface roughness; semiconductor superlattices;
D O I：
10.1063/1.3050531
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness.
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页数：3
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