Growth and characterization of InSb/InP short-period strained-layer superlattices grown by ALMBE

We report for the first time the successful growth of short period strained-layer superlattices of InSb/InP by atomic layer molecular beam epitaxy. This sample combination is especially interesting because the equivalent ternary alloy has a very wide miscibility gap in which it cannot be grown. The samples were characterized by reflection high-energy electron diffraction, X-ray diffraction, Hall measurements and Raman spectroscopy. The X-ray measurements show clearly satellite peaks that indicate the formation of the superlattice. Raman spectra show the confined phonon peaks of InSb (194 cm(-1)) and InP (300 cm(-1)), respectively. Exciting in resonance with the E(1) transition of the SPSL the peaks corresponding to the LO(1) and LO(2) phonons are clearly identified.