Growth and characterization of (InSb)(m)(InP)(n) short period superlattices

被引：2
|
作者：
Utzmeier, T
Armelles, G
Postigo, PA
Briones, F
Castrillo, P
SanzHervas, A
Aguilar, M
Abril, EJ
机构：
[1] DEPT E & ELECT,VALLADOLID 47011,SPAIN
[2] ETSIT,DEPT TECNOL ELECT,MADRID 28040,SPAIN
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 22期
关键词：
D O I：
10.1063/1.118735
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Shea period superlattices of (InSb)(m)(InP)(n) were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations, provided information about intermixing at the interfaces. (C) 1997 American Institute of Physics.
引用
收藏
页码：3017 / 3019
页数：3
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