SOI wafer fabricated with extra thick deposited BOX layer using surface activated bonding at room temperature for customized power devices

We proposed the fabrication of an SOI wafer for customized power devices by chemical vapor deposition (CVD) of a BOX layer and surface-activated bonding (SAB). We demonstrated that the use of this SOI wafer can form an extra thick BOX layer of 10 mu m and can be fabricated at temperature below 500 degrees C without thermal stress. Therefore, we believe that this SOI wafer can contribute to the improvement of customized power devices with breakdown voltages of over 500V.