Plane-view transmission electron microscopy of Si/GaAs interfaces fabricated by surface-activated bonding at room temperature

被引：0
|
作者：
Ohno, Yutaka [1 ]
Yoshida, Hideto [2 ]
Takeda, Seiji [2 ]
Liang Jianbo [3 ]
Shigekawa, Naoteru [3 ]
机构：
[1] Tohoku Univ, IMR, Aoba Ku, Katahira 2-1-1, Sendai, Miyagi 9808577, Japan
[2] Osaka Univ, ISIR, Mihogaoka 8-1, Ibaraki, Osaka 5670047, Japan
[3] Osaka City Univ, Grad Sch Engn, Sumiyoshi Ku, Sugimoto 3-3-138, Osaka 5588585, Japan
来源：
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
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页码：4 / 4
页数：1
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