SOI wafer fabricated with extra thick deposited BOX layer using surface activated bonding at room temperature for customized power devices

被引：0

作者：

Koga, Yoshihiro ^{[1
]}

Kurita, Kazunari ^{[1
]}

机构：

[1] SUMCO Corp, 1-52 Kubara,Yamashiro Cho, Imari, Saga 8494256, Japan

来源：

PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed the fabrication of an SOI wafer for customized power devices by chemical vapor deposition (CVD) of a BOX layer and surface-activated bonding (SAB). We demonstrated that the use of this SOI wafer can form an extra thick BOX layer of 10 mu m and can be fabricated at temperature below 500 degrees C without thermal stress. Therefore, we believe that this SOI wafer can contribute to the improvement of customized power devices with breakdown voltages of over 500V.

引用

页码：5 / 5

页数：1

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