Room-temperature Wafer Direct Bonding Using Ne-beam Surface-Activation

被引：2
|
作者：
Takagi, H. [1 ]
Kurashima, Y. [1 ]
Maeda, A. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn, Tsukuba, Ibaraki 3058564, Japan
来源：
SEMICONDUCTOR WAFER BONDING 13: SCIENCE, TECHNOLOGY, AND APPLICATIONS | 2014年 / 64卷 / 05期
关键词：
SILICON-WAFERS; DAMAGE;
D O I：
10.1149/06405.0069ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In the surface activated bonding (SAB) at room temperature, the surfaces of wafers are sputter etched by high-energy ion/atom beams of inert gases to remove surface contaminants and create active surfaces, which are ready to form inter-atomic bonds even at room temperature. For this purpose Ar has been used. However, sputter etching by Ar high-energy ion/atom beam causes increase of surface roughness. We have examined the applicability of fast-atom-beam (FAB) of Ne and Xe to SAB of Si wafers at room temperature. We confirmed that Ne-FAB does not cause surface roughening and Si wafers are successfully bonded by Ne-beam surface activation. In addition, we found that Ne-FAB sputter etching has surface smoothing effect which can improve various properties of the bonding interface.
引用
收藏
页码：69 / 75
页数：7
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