Annealing behavior of InAs/GaAs quantum dot structures

被引：11

作者：

Wang, ZM ^{[1
]}

Feng, SL ^{[1
]}

Lu, ZD ^{[1
]}

Zhao, Q ^{[1
]}

Yang, XP ^{[1
]}

Chen, ZG ^{[1
]}

Xu, ZY ^{[1
]}

Zheng, HZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 02期

基金：

中国国家自然科学基金;

关键词：

annealing; InAs/GaAs; quantum dots;

D O I：

10.1007/s11664-998-0188-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the annealing behavior of InAs layers with different thicknesses in a GaAs matrix. The diffusion enhancement by strain, which is well established in strained quantum wells, occurs in InAs/GaAs quantum dots (QDs). A shift of the QD luminescence peak toward higher energies results from this enhanced diffusion. In the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. This results in a decrease of the QD luminescence intensity, and the QD peak energy is weakly affected.

引用

页码：59 / 61

页数：3

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