Current instabilities in GaAs/InAs quantum dot structures

被引：0
|
作者：
Horváth, ZJ [1 ]
Pödör, B [1 ]
Frigeri, P [1 ]
Franchi, S [1 ]
Gombia, E [1 ]
Mosca, R [1 ]
Tuyen, VV [1 ]
Dózsa, L [1 ]
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, MFA, H-1525 Budapest, Hungary
来源：
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 2001年 / 4413卷
关键词：
GaAs/InAs; quantum dots; current instability; minority injection; recombination;
D O I：
10.1117/12.425420
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with the high recombination rate through quantum dots. The instabilities are connected with unstable charge accupation of quantum dots.
引用
收藏
页码：153 / 156
页数：4
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