Study of annealed InAs/GaAs quantum dot structures

被引：7
|
作者：
Qiu, Y. [1 ]
Zhang, Z. Y. [1 ]
Hogg, R. A. [1 ]
Cullis, A. G. [1 ]
Walther, T. [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS | 2010年 / 209卷
关键词：
TRANSMISSION ELECTRON-MICROSCOPY; DIFFUSION; SEGREGATION; IMPURITY; LAYERS;
D O I：
10.1088/1742-6596/209/1/012036
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Two similar samples of InAs/GaAs quantum dots and their response to annealing at 700 degrees C have been studied using scanning transmission electron microscopy The only difference m the growth of both samples is the inclusion of p-doping by carbon in the GaAs barriers between the quantum dots in one of the wafers The size and line density of and the change of indium concentration within the quantum dots have been investigated to understand the effect of carbon doping on the diffusion of indium atoms within the structures during the anneal
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页数：6
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