Photovoltage spectroscopy of InAs/GaAs quantum dot structures

被引：22
|
作者：
Tousková, J
Samochin, E
Tousek, J
Oswald, J
Hulicius, E
Pangrác, J
Melichar, K
Simecek, T
机构：
[1] Charles Univ, Fac Math & Phys, Prague 12116, Czech Republic
[2] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 12期
关键词：
D O I：
10.1063/1.1480118
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In addition to widely used photoluminescence spectroscopy photovoltaic measurement of quantum dot structures can give complementary information about electron and hole transitions. Structures with self-organized InAs quantum dots in GaAs matrix were grown by the Stranski-Krastanov mechanism using the low pressure metalorganic vapor phase epitaxy technique. Two types of samples were studied, with single and multiple quantum dot layers. We have shown that surface photovoltage spectroscopy can be used for the study of single, as well as multiple quantum dot layer structures. (C) 2002 American Institute of Physics.
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收藏
页码：10103 / 10106
页数：4
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