Hafnium oxide based ferroelectric devices for memories and beyond

被引：0
|
作者：
Mikolajick, Thomas [1 ,2 ]
Schroeder, Uwe [1 ]
Slesazeck, Stefan [1 ]
机构：
[1] NaMLab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany
[2] Tech Univ Dresden, Inst Semicond & Microsyst, D-01062 Dresden, Germany
来源：
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2018年
关键词：
FILMS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
引用
收藏
页数：2
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