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- [1] Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect TransistorsACS APPLIED MATERIALS & INTERFACES, 2017, 9 (04) : 3792 - 3798Mulaosmanovic, Halid论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyOcker, Johannes论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMueller, Stefan论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanySchroeder, Uwe论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMueller, Johannes论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS CNT, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyPolakowski, Patrick论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS CNT, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyFlachowsky, Stefan论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, Germanyvan Bentum, Ralf论文数: 0 引用数: 0 h-index: 0机构: GLOBALFOUNDRIES, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMikolajick, Thomas论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanySlesazeck, Stefan论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, Germany
- [2] Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?2023 IEEE INTERNATIONAL MEMORY WORKSHOP, IMW, 2023, : 93 - 96Seidel, Konrad论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyLehninger, David论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyMueller, Franz论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyRaffel, Yannick论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanySuenbuel, Ayse论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyRevello, Ricardo论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyHoffmann, Raik论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyDe, Sourav论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyKaempfe, Thomas论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, GermanyLederer, Maximilian论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer IPMS, D-01109 Dresden, Germany Fraunhofer IPMS, D-01109 Dresden, Germany
- [3] Hafnium Oxide-Based Ferroelectric Devices for Computing-in-Memory ApplicationsPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (09):Chen, Pei-Yao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaHe, Zheng-Yu论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaCha, Ming-Yang论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaLiu, Hao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhu, Hao论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaChen, Lin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaSun, Qing-Qing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaDing, Shi-Jin论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
- [4] Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devicesTHIN SOLID FILMS, 2024, 799Fan, Chia-Chi论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, TaiwanChen, Hsuan-Han论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, TaiwanLiao, Ruo-Yin论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, TaiwanChou, Wu-Ching论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan论文数: 引用数: h-index:机构:Hsu, Hsiao-Hsuan论文数: 0 引用数: 0 h-index: 0机构: Natl Taipei Univ Technol, Inst Mat Sci & Engn, Taipei 10608, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, TaiwanHan, Su-Ting论文数: 0 引用数: 0 h-index: 0机构: Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Hunghom, Hong Kong, Peoples R China Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, TaiwanCheng, Chun-Hu论文数: 0 引用数: 0 h-index: 0机构: Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei 10610, Taiwan Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
- [5] Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient methodAPPLIED PHYSICS LETTERS, 2023, 122 (11)Li, Yilin论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaZhu, Hui论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaLiu, Xing论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaWang, Xiaolei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaXu, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaPan, Shijie论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaXiang, Jinjuan论文数: 0 引用数: 0 h-index: 0机构: Beijing Superstring Acad Memory Technol, Beijing 100176, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaZhou, Lixing论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaYao, Zhiwen论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaSun, Yerong论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R ChinaFeng, Shiwei论文数: 0 引用数: 0 h-index: 0机构: Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China
- [6] Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric filmsCOMPUTATIONAL MATERIALS SCIENCE, 2023, 221Deng, Yuhui论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaYang, Wanting论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaLin, Xin论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaLiao, Ningtao论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaZhu, Bingyan论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaYang, Qiong论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaJiang, Jie论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R ChinaJiang, Limei论文数: 0 引用数: 0 h-index: 0机构: Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China
- [7] Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applicationsScience China(Information Sciences), 2023, 66 (10) : 84 - 104论文数: 引用数: h-index:机构:Guoliang TIAN论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits, University of Chinese Academy of Sciences Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesJiali HUO论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits, University of Chinese Academy of Sciences Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesFang ZHANG论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences School of Microelectronics, Xidian University Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesQingzhu ZHANG论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesGaobo XU论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesZhenhua WU论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits, University of Chinese Academy of Sciences Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesYan CHENG论文数: 0 引用数: 0 h-index: 0机构: Department of Electronics, East China Normal University Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesYan LIU论文数: 0 引用数: 0 h-index: 0机构: School of Microelectronics, Xidian University Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of SciencesHuaxiang YIN论文数: 0 引用数: 0 h-index: 0机构: Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits, University of Chinese Academy of Sciences Integrated Circuit Advanced R&D Center, Institute of Microelectronics of Chinese Academy of Sciences
- [8] Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applicationsSCIENCE CHINA-INFORMATION SCIENCES, 2023, 66 (10)Zhang, Zhaohao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaTian, Guoliang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaHuo, Jiali论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaZhang, Fang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaZhang, Qingzhu论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaXu, Gaobo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaWu, Zhenhua论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaCheng, Yan论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, Dept Elect, Shanghai 200241, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaLiu, Yan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, Xian 710071, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R ChinaYin, Huaxiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China Chinese Acad Sci, Integrated Circuit Adv R&D Ctr, Inst Microelect, Beijing 100029, Peoples R China
- [9] Discrete Ferroelectric Polarization Switching in Nanoscale Oxide-Channel Ferroelectric Field-Effect TransistorsNANO LETTERS, 2025, 25 (08) : 3173 - 3179Shao, Yanjie论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USABorujeny, Elham Rafie论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USAFidalgo, Jorge Navarro论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA Univ Politecn Madrid, Madrid, Spain MIT, Microsyst Technol Labs, Cambridge, MA 02139 USAHuang, John Chao-Chung论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USAEspedal, Tyra E.论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USAAntoniadis, Dimitri A.论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USAdel Alamo, Jesus A.论文数: 0 引用数: 0 h-index: 0机构: MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
- [10] Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devicesJOURNAL OF APPLIED PHYSICS, 2008, 104 (11)Kim, Yong-Mu论文数: 0 引用数: 0 h-index: 0机构: Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South KoreaLee, Jang-Sik论文数: 0 引用数: 0 h-index: 0机构: Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea