Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

被引：259

作者：

Mulaosmanovic, Halid ^{[1
]}

Ocker, Johannes ^{[1
]}

Mueller, Stefan ^{[1
]}

Schroeder, Uwe ^{[1
]}

Mueller, Johannes ^{[2
]}

Polakowski, Patrick ^{[2
]}

Flachowsky, Stefan ^{[3
]}

van Bentum, Ralf ^{[3
]}

Mikolajick, Thomas ^{[1
,4
]}

Slesazeck, Stefan ^{[1
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Fraunhofer IPMS CNT, D-01099 Dresden, Germany

[3] GLOBALFOUNDRIES, D-01109 Dresden, Germany

[4] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 04期

关键词：

ferroelectric switching; hafnium oxide; domain; nucleation; field-effect transistor; THIN-FILMS; CYCLING BEHAVIOR;

D O I：

10.1021/acsami.6b13866

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.

引用

页码：3792 / 3798

页数：7

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