Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide

Abstract: Demonstrated the influence of buffer layers of group IVB oxides on the electrophysical characteristics of ferroelectric memory storage elements with a hafnium oxide functional layer. Thin films of buffer and functional layers were deposited by plasma-enhanced atomic layer deposition using the Russian system “Izofaz TM-200K-01.” It was experimentally found that the introduction of thin-film buffer layers reduces the drop in the value of residual polarization after heating. Zirconium oxide buffer layers positively effect of the memory window of the storage element, and titanium oxide buffer layer allows reducing the influence of the imprint effect and increasing the value of the remnant polarization and switching endurance. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S38–S43. Pleiades Publishing, Ltd., 2023.