Buffer Layers for Nonvolatile Ferroelectric Memory Based on Hafnium Oxide

被引：0

作者：

Reznik A.A. ^{[1
,2
]}

Rezvanov A.A. ^{[1
,2
]}

Zyuzin S.S. ^{[1
]}

机构：

[1] JSC Molecular Electronics Research Institute, Zelenograd, Moscow

[2] Moscow Institute of Physics and Technology (National Research University), Dolgoprudny

来源：

Russian Microelectronics | 2023年 / 52卷 / Suppl 1期

关键词：

buffer layers; FeRAM; PEALD; remnant polarization;

D O I：

10.1134/S1063739723600486

中图分类号：

学科分类号：

摘要：

Abstract: Demonstrated the influence of buffer layers of group IVB oxides on the electrophysical characteristics of ferroelectric memory storage elements with a hafnium oxide functional layer. Thin films of buffer and functional layers were deposited by plasma-enhanced atomic layer deposition using the Russian system “Izofaz TM-200K-01.” It was experimentally found that the introduction of thin-film buffer layers reduces the drop in the value of residual polarization after heating. Zirconium oxide buffer layers positively effect of the memory window of the storage element, and titanium oxide buffer layer allows reducing the influence of the imprint effect and increasing the value of the remnant polarization and switching endurance. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, Suppl. 1, pp. S38–S43. Pleiades Publishing, Ltd., 2023.

引用

页码：S38 / S43

页数：5

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