Electrical transport properties of perpendicular magnetized Mn-Ga epitaxial films

被引：60

作者：

Wu, Feng ^{[1
]}

Sajitha, E. P. ^{[1
]}

Mizukami, Shigemi ^{[1
]}

Watanabe, Daisuke ^{[1
]}

Miyazaki, Terunobu ^{[1
]}

Naganuma, Hiroshi ^{[2
]}

Oogane, Mikihiko ^{[2
]}

Ando, Yasuo ^{[2
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

gallium alloys; Hall effect; magnetic thin films; magnons; manganese alloys; metallic epitaxial layers; spin polarised transport; HALF-METALLIC FERROMAGNETS; THIN-FILMS; MAGNON SCATTERING; BAND-STRUCTURE;

D O I：

10.1063/1.3298363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrical transport properties of perpendicular magnetized Mn-Ga epitaxial films with various thicknesses. The maximum extraordinary Hall resistivity and Hall angle is 11.5 mu cm and 5.7%, respectively, which is comparable to the highest value reported in amorphous Fe0.79Gd0.21 alloy. In the low temperature region, resistivity was proportional to T-2.9 owing to the unconventional one-magnon scattering processes, indicating high spin polarization of this material.

引用

页数：3

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