Electrical transport properties of perpendicular magnetized Mn-Ga epitaxial films

被引：60
|
作者：
Wu, Feng [1 ]
Sajitha, E. P. [1 ]
Mizukami, Shigemi [1 ]
Watanabe, Daisuke [1 ]
Miyazaki, Terunobu [1 ]
Naganuma, Hiroshi [2 ]
Oogane, Mikihiko [2 ]
Ando, Yasuo [2 ]
机构：
[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期
关键词：
gallium alloys; Hall effect; magnetic thin films; magnons; manganese alloys; metallic epitaxial layers; spin polarised transport; HALF-METALLIC FERROMAGNETS; THIN-FILMS; MAGNON SCATTERING; BAND-STRUCTURE;
D O I：
10.1063/1.3298363
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report electrical transport properties of perpendicular magnetized Mn-Ga epitaxial films with various thicknesses. The maximum extraordinary Hall resistivity and Hall angle is 11.5 mu cm and 5.7%, respectively, which is comparable to the highest value reported in amorphous Fe0.79Gd0.21 alloy. In the low temperature region, resistivity was proportional to T-2.9 owing to the unconventional one-magnon scattering processes, indicating high spin polarization of this material.
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页数：3
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