Advanced light trapping interface for a-Si:H thin film

被引：5

作者：

Nasser, Hisham ^{[1
,2
]}

Saleh, Zaki M. ^{[1
,3
]}

Ozkol, Engin ^{[1
]}

Bek, Alpan ^{[1
,2
,4
]}

Turan, Rasit ^{[1
,2
,4
]}

机构：

[1] Middle E Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, Dumlupinar Blvd 1, TR-06800 Ankara, Turkey

[2] Middle E Tech Univ, Micro & Nanotechnol Grad Program, TR-06800 Ankara, Turkey

[3] Arab Amer Univ Jenin, Jenin, Israel

[4] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 9-11 | 2015年 / 12卷 / 9-11期

关键词：

localized surface plasmons; light trapping; wet texturing; Al:ZnO; a-Si:H; SOLAR-CELLS; AMORPHOUS SI; EFFICIENCY; NANOPARTICLES; ENHANCEMENT; ABSORPTION;

D O I：

10.1002/pssc.201510097

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Surface texturing of transparent conducting oxides and plasmonic interfaces are two important techniques used separately in thin film solar cells to reduce reflection and enhance light-trapping. In this study, we merge the effects of Al:ZnO surface texturing and Ag nanoparticles (AgNPs) plasmonics in a single light-trapping interface to investigate their combined light trapping efficiency on a-Si:H thin film. Light scattered by this interface is optimized by placing a thin SiO2 spacer layer between AgNPs and a-Si: H absorber layer. Our results indicate that the AgNPs embedded in SiO2 significantly enhance absorption at energies close to the band gap of a-Si: H. Surface texturing by wet etching of Al: ZnO combined with AgNP produces the highest optical extinction of a-Si:H thin film at the band edge. Furthermore, the measured photocurrent in a-Si:H shows a clear increase not only at AgNPs resonance wavelength but over the entire wavelength range. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1206 / 1210

页数：5

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