Fabrication and characterization of metal/GaN contacts

被引：34

作者：

Pal, S ^{[1
]}

Sugino, T

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

[2] Osaka Univ, Dept Elect Engn, Osaka, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 161卷 / 1-2期

关键词：

GaN; ohmic contact; specific contact resistance; transfer length method; XPS;

D O I：

10.1016/S0169-4332(00)00302-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, the formation of ohmic contacts to n-GaN using Al, Ti/Al and Ti/Au has been investigated. n-GaN Ti/Al contacts showed the lowest specific contact resistance after annealing at 900 degrees C for 30 s. For p-GaN, Ni/Au contacts were studied. A lowering of sheet resistance upon annealing in the case of n-GaN and an increase for p-GaN might be attributed to formation of N-vacancy. No native oxide was detected on GaN surface by XPS. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：263 / 267

页数：5

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