Fabrication and characterization of metal/GaN contacts

被引：34
|
作者：
Pal, S [1 ]
Sugino, T
机构：
[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India
[2] Osaka Univ, Dept Elect Engn, Osaka, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 161卷 / 1-2期
关键词：
GaN; ohmic contact; specific contact resistance; transfer length method; XPS;
D O I：
10.1016/S0169-4332(00)00302-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, the formation of ohmic contacts to n-GaN using Al, Ti/Al and Ti/Au has been investigated. n-GaN Ti/Al contacts showed the lowest specific contact resistance after annealing at 900 degrees C for 30 s. For p-GaN, Ni/Au contacts were studied. A lowering of sheet resistance upon annealing in the case of n-GaN and an increase for p-GaN might be attributed to formation of N-vacancy. No native oxide was detected on GaN surface by XPS. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：263 / 267
页数：5
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