Fabrication and characterization of metal/GaN contacts

被引：34
|
作者：
Pal, S [1 ]
Sugino, T
机构：
[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India
[2] Osaka Univ, Dept Elect Engn, Osaka, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 161卷 / 1-2期
关键词：
GaN; ohmic contact; specific contact resistance; transfer length method; XPS;
D O I：
10.1016/S0169-4332(00)00302-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, the formation of ohmic contacts to n-GaN using Al, Ti/Al and Ti/Au has been investigated. n-GaN Ti/Al contacts showed the lowest specific contact resistance after annealing at 900 degrees C for 30 s. For p-GaN, Ni/Au contacts were studied. A lowering of sheet resistance upon annealing in the case of n-GaN and an increase for p-GaN might be attributed to formation of N-vacancy. No native oxide was detected on GaN surface by XPS. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：263 / 267
页数：5
相关论文
共 50 条
  • [21] GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts
    Chang, SJ
    Lee, ML
    Sheu, JK
    Lai, WC
    Su, YK
    Chang, CS
    Kao, CJ
    Chi, GC
    Tsai, JA
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) : 212 - 214
  • [22] Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
    Xu, HZ
    Wang, ZG
    Kawabe, M
    Harrison, I
    Ansell, BJ
    Foxon, CT
    JOURNAL OF CRYSTAL GROWTH, 2000, 218 (01) : 1 - 6
  • [23] Fabrication and characterization of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE
    Flannery, L.B.
    Harrison, I.
    Lacklison, D.E.
    Dykeman, R.I.
    Cheng, T.S.
    Foxon, C.T.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1998, B50 (1-3): : 307 - 310
  • [24] Electrical characterization of metal/pentacene contacts
    Diao, Lei
    Frisbie, C. Daniel
    Schroepfer, Dominic D.
    Ruden, P. Paul
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
  • [25] Reliable Fabrication of Metal Contacts on Silicon Nanowire Forests
    Dimaggio, Elisabetta
    Pennelli, Giovanni
    NANO LETTERS, 2016, 16 (07) : 4348 - 4354
  • [26] A theoretical study on the metal contacts of monolayer gallium nitride (GaN)
    Sun, Rui
    Yang, Guofeng
    Wang, Fuxue
    Chu, Guangyong
    Lu, Naiyan
    Shen, Xiaowen
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 84 : 64 - 70
  • [27] Metal contacts to p-type GaN by electroless deposition
    Lewis, L.
    Casey, D.
    Rohan, J. F.
    Maaskant, P. P.
    MANUFACTURING LEDS FOR LIGHTING AND DISPLAYS, 2007, 6797 : J7970 - J7970
  • [28] Fabrication and characterization of freestanding circular GaN gratings
    Wang, Yongjin
    Hu, Fangren
    Sameshima, Hidehisa
    Hane, Kazuhiro
    OPTICS EXPRESS, 2010, 18 (02): : 773 - 779
  • [29] Fabrication and characterization of GaN junctionfield effect transistors
    Zhang, L
    Lester, LF
    Baca, AG
    Shul, RJ
    Chang, PC
    Willison, CG
    Mishra, UK
    Denbaars, SP
    Zolper, JC
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [30] Fabrication and Characterization of GaN/Diamond bonding interface
    Kobayashi, A.
    Shimizu, Y.
    Ohno, Y.
    Kim, S. W.
    Koyama, K.
    Kasu, M.
    Nagai, Y.
    Shigekawa, N.
    Liang, J.
    2021 7TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2021, : 41 - 41
12345