Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique

被引：0
|
作者：
Tezuka, T [1 ]
Nakaharai, S [1 ]
Moriyama, Y [1 ]
Sugiyama, N [1 ]
Takagi, S [1 ]
机构：
[1] MIRAI, ASET, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源：
2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2004年
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中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new approach to selectively form strained SiGe-onInsulator (SGOI) channel transistors with very high Ge fraction on an SOI substrate is demonstrated. This method consists of epitaxial growth of SiGe layer with low Ge fraction and local oxidation processes. The obtained SGOI-pMOSFET with a Ge fraction of 93% has exhibited mobility enhancement up to 10 times. The thickness scalability of the SGOI channels was also confirmed down to 5 nm.
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页码：198 / 199
页数：2
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