Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

被引：65
|
作者：
Tezuka, T [1 ]
Sugiyama, N [1 ]
Mizuno, T [1 ]
Takagi, S [1 ]
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 05期
关键词：
mobility enhancement; SiGe MOSFET; silicon-on-insulator (SOI) technology; strained SiGe channel; surface channel MOSFET; ultrathin body SOI;
D O I：
10.1109/TED.2003.813249
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel concept and a fabrication technique of strained SiGe-on-insulator (SGOI) pMOSFET are proposed and demonstrated. This device has an ultrathin strained SiGe channel layer, which is directly sandwiched by gate oxide and buried oxide layers. The mobility enhancement of 2.3 times higher than the universal mobility of conventional universal Si pMOSFETs was obtained for a pMOSFET with 19-nm-thick Si0.58Ge0.42 channel layer, which is formed by high-temperature oxidation of a Si0.9Ge0.1 layer grown on a Si-on-insulator (SOI) substrate. A fully depleted SGOI MOSFET with this simple single-layer body structure is promising for scaled SOI p-MOSFET with high current drive.
引用
收藏
页码：1328 / 1333
页数：6
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