Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process

被引：47
|
作者：
Hirashita, Norio [1 ]
Moriyama, Yoshihiko [1 ]
Nakaharai, Shu [1 ]
Irisawa, Toshifumi [1 ]
Sugiyama, Naoharu [1 ]
Takagi, Shin-ichi [2 ,3 ]
机构：
[1] Assoc Super Adv Elect Technol, MIRAI, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
[2] Natl Inst Adv Ind Sci & Technol, MIRAI, Tsukuba, Ibaraki 3058569, Japan
[3] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 10期
关键词：
D O I：
10.1143/APEX.1.101401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical properties of Ge-rich SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) structures fabricated by Ge condensation process have been studied. The SGOI and GOI structures for Ge composition, X-Ge, larger than 0.4 exhibit p-type conduction. The hole density is found to rapidly increase from 10(16) to 10(18) cm(-3) with an increase in X-Ge during the Ge condensation and to decrease down to low-10(17) cm(-3) when X-Ge reaches unity. Analyses of scanning spreading resistance microscopy have directly revealed that the SGOI and GOI structures are highly conductive along the crosshatched slip bands formed during the condensation, meaning that the holes are induced along the slip bands in SGOI and GOI films. As a result, it is concluded that the hole induced during the Ge condensation is strongly associated with the slip band formation. (c) 2008 The Japan Society of Applied Physics
引用
收藏
页码：1014011 / 1014013
页数：3
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