Strained-Silicon Heterojunction Bipolar Transistor

被引：15

作者：

Persson, Stefan ^{[1
]}

Fjer, Mouhine ^{[1
]}

Escobedo-Cousin, Enrique ^{[1
]}

Olsen, Sarah H. ^{[1
]}

Malm, Bengt Gunnar ^{[2
]}

Wang, Yong-Bin ^{[2
]}

Hellstrom, Per-Erik ^{[2
]}

Ostling, Mikael ^{[2
]}

O'Neill, Anthony G. ^{[1
]}

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Royal Inst Technol KTH, Sch Informat & Commun Technol, S-16440 Stockholm, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

Band-gap engineering; BiCOMS integration; stained-Si heterojunction bipolar transistor (HBT); SIGE HBT; FABRICATION; TECHNOLOGY; VOLTAGE;

D O I：

10.1109/TED.2010.2045667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental and modeling results are reported for high-performance strained-silicon heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a compressively strained Si0.7Ge0.3 base on top of a relaxed Si0.85Ge0.15 collector. By using a Si0.85Ge0.15 virtual substrate strain platform, it is possible to utilize a greater difference in energy band gaps between the base and the emitter without strain relaxation of the base layer. This leads to much higher gain, which can be traded off against lower base resistance. There is an improvement in the current gain beta of 27x over a conventional silicon bipolar transistor and 11x over a conventional SiGe HBT, which were processed as reference devices. The gain improvement is largely attributed to the difference in energy band gap between the emitter and the base, but the conduction band offset between the base and the collector is also important for the collector current level.

引用

页码：1243 / 1252

页数：10

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