Strained-silicon on silicon and strained-silicon on silicon-germanium on silicon by relaxed buffer bonding

We report the creation of two novel complementary metal oxide semiconductor (CMOS)-compatible platforms: strained-silicon on silicon (SSOS) and strained-silicon on silicon-germanium on silicon (SGOS). SSOS substrate has an epitaxially defined, strained-silicon layer directly on silicon wafer without an intermediate SiGe or oxide layer. SSOS is a homochemical heterojunction, i.e., a heterojunction defined by strain state only and not by an accompanying compositional change. SGOS has an epitaxially defined SiGe layer between the strained-silicon channel and the Si substrate, which may prove necessary to prevent excessive off-state leakage in metal oxide semiconductor (MOS) devices due to overlap of source-drain contacts and the interfacial misfit array (c) 2005 The Electrochemical Society.