Performance evaluation of deep sub-micron, fully-depleted silicon-on-insulator (FD-SOI) transistors at low temperatures

被引：0

作者：

Yuan, J ^{[1
]}

Patel, JU ^{[1
]}

Vandooren, A ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

2000 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOL 5 | 2000年

关键词：

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

The performance of 0.25, 0.3 and 0.35 mum fully-depleted SOI transistors is characterized between 77 and 300K. The behavior of device parameters such as drain current, mobility, transconductance, threshold voltage, subthreshold slope, and Early voltage is analyzed. The suitability of sub-micron FD-SOI devices is examined for low temperature operation as encountered in deep space exploration missions. The results indicate significant performance improvements with decreasing temperature down to 100K. A second effect dominates below this temperature, thus decreasing mobility and leading to other parameter degradations below 100K.

引用

页码：415 / 419

页数：5

共 44 条

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