High-power highly reliable 1.06μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers

被引：1

作者：

Yuda, M

Temmyo, J

Sasaki, T

Sugo, M

Amano, C

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 08期

关键词：

D O I：

10.1049/el:20030455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High output power of about 800 mW in a chip and stable operation for over 14 000 It under 225 mW at 50degreesC have been achieved in 1.06 mum InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers.

引用

页码：661 / 662

页数：2

共 50 条

[41] GROWTH OF INGAAS/GAAS STRAINED QUANTUM-WELLS ON GAAS(111)B SUBSTRATES AND CONTINUOUS-WAVE OPERATION OF (111)-ORIENTED INGAAS STRAINED-QUANTUM-WELL LASERS
TAKEUCHI, T
MURAKI, K
HANAMAKI, Y
FUKATSU, S
YAMADA, N
OGASAWARA, N
MIKOSHIBA, N
SHIRAKI, Y
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1338 - 1343
[42] TEMPERATURE-DEPENDENCE OF 2-MU-M STRAINED-QUANTUM-WELL INGAAS/INGAASP/INP DIODE-LASERS
MARTINELLI, RU
MENNA, RJ
TRIANO, A
HARVEY, MG
OLSEN, GH
ELECTRONICS LETTERS, 1994, 30 (04) : 324 - 326
[43] Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers
Batrak, DV
Bogatova, SA
Borodaenko, AV
Drakin, AE
Bogatov, A
QUANTUM ELECTRONICS, 2005, 35 (04) : 316 - 322
[44] OPTIMIZATION OF 670-NM STRAINED-QUANTUM-WELL LASER-DIODES FOR HIGH-TEMPERATURE OPERATION
SMOWTON, PM
SUMMERS, HD
REES, P
BLOOD, P
IEE PROCEEDINGS-OPTOELECTRONICS, 1994, 141 (02): : 136 - 140
[45] Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics
Seong-Ju Bae
Yong-Tak Lee
Optical and Quantum Electronics, 2008, 40 : 749 - 756
[46] Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics
Bae, Seong-Ju
Lee, Yong-Tak
OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (10) : 749 - 756
[47] Low threshold current density 1.3 μm metamorphic InGaAs/GaAs quantum well laser diodes
Wu, D.
Wang, H.
Wu, B.
Ni, H.
Huang, S.
Xiong, Y.
Wang, P.
Han, Q.
Niu, Z.
Tangring, I.
Wang, S. M.
ELECTRONICS LETTERS, 2008, 44 (07) : 474 - U6
[48] High performance highly strained InGaAs quantum-well ridge waveguide lasers
A. Uddin
M. Sadeghi
A. Larsson
Science in China(Series E:Technological Sciences), 2005, (06) : 679 - 684
[49] HIGH-POWER, HIGH-TEMPERATURE INGAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL DIODE-LASERS
WANG, CA
CHOI, HK
WALPOLE, JN
EVANS, GA
REICHERT, WF
CHOW, WW
FULLER, CT
ELECTRONICS LETTERS, 1994, 30 (08) : 646 - 648
[50] High performance buried heterostructure lambda=1.5 mu m InGaAs/AlGaInAs strained-layer quantum well laser diodes
Thijs, PJA
vanDongen, T
Binsma, JJM
Jansen, EJ
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 765 - 768

← 1 2 3 4 5 →