High-power highly reliable 1.06μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers

被引：1
|
作者：
Yuda, M
Temmyo, J
Sasaki, T
Sugo, M
Amano, C
机构：
[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 08期
关键词：
D O I：
10.1049/el:20030455
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High output power of about 800 mW in a chip and stable operation for over 14 000 It under 225 mW at 50degreesC have been achieved in 1.06 mum InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers.
引用
收藏
页码：661 / 662
页数：2
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