High-power InGaAs/GaAsP strained quantum well vertical-cavity surface-emitting laser array

被引：1
|
作者：
Liu, Di [1 ,2 ]
Ning, Yong-Qiang [1 ]
Zhang, Jin-Long [1 ]
Zhang, Xing [1 ]
Wang, Li-Jun [1 ]
机构：
[1] State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
[2] University of Chinese Academy of Sciences, Beijing 100039, China
来源：
Guangxue Jingmi Gongcheng/Optics and Precision Engineering | 2012年 / 20卷 / 10期
关键词：
D O I：
10.3788/OPE.20122010.2147
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2147 / 2153
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