Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

被引：0
|
作者：
Seong-Ju Bae
Yong-Tak Lee
机构：
[1] Korea Advanced Nano Fab Center (KANC),Department of Information and Communications
[2] Gwangju Institute of Science and Technology (GIST),undefined
来源：
Optical and Quantum Electronics | 2008年 / 40卷
关键词：
InGaAlAs; High temperature; Tensile strain; Quantum well;
D O I：
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学科分类号：
摘要：
A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 μm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T0 > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.
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页码：749 / 756
页数：7
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