Achieving high trace-metal purity levels using dynamic reaction cell ICP-MS

被引：0

作者：

Ping, CM ^{[1
]}

Kishi, Y

Kawabata, K

Thomas, R

机构：

[1] Merck, Singapore, Singapore

[2] PerkinElmer Instruments, Semicond Business Unit, Shelton, CT USA

[3] Sci Solut, Gaithersburg, MD USA

来源：

MICRO | 2003年 / 21卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / 42

页数：6

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