Achieving high trace-metal purity levels using dynamic reaction cell ICP-MS

被引：0
|
作者：
Ping, CM [1 ]
Kishi, Y
Kawabata, K
Thomas, R
机构：
[1] Merck, Singapore, Singapore
[2] PerkinElmer Instruments, Semicond Business Unit, Shelton, CT USA
[3] Sci Solut, Gaithersburg, MD USA
来源：
MICRO | 2003年 / 21卷 / 03期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：37 / 42
页数：6
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