Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

被引：5
|
作者：
Xu, J. F. [1 ]
Thibado, P. M.
Awo-Affouda, C.
Moore, R.
LaBella, V. P.
机构：
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷
基金：
美国国家科学基金会;
关键词：
Auger electron spectroscopy; GaMnAs; semiconducting materials;
D O I：
10.1016/j.jcrysgro.2006.11.234
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion etching. The Mn concentration is higher near the surface and then decreases with depth for films grown at high substrate temperatures. The Mn concentration profile is much more uniform when films are grown using a low substrate temperature. What was unexpectedly found are high levels of oxygen in the low substrate temperature grown thin films. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：54 / 57
页数：4
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