Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

被引：5
|
作者：
Xu, J. F. [1 ]
Thibado, P. M.
Awo-Affouda, C.
Moore, R.
LaBella, V. P.
机构：
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷
基金：
美国国家科学基金会;
关键词：
Auger electron spectroscopy; GaMnAs; semiconducting materials;
D O I：
10.1016/j.jcrysgro.2006.11.234
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion etching. The Mn concentration is higher near the surface and then decreases with depth for films grown at high substrate temperatures. The Mn concentration profile is much more uniform when films are grown using a low substrate temperature. What was unexpectedly found are high levels of oxygen in the low substrate temperature grown thin films. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：54 / 57
页数：4
相关论文
共 50 条
  • [31] Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy
    Ok, YW
    Choi, CJ
    Seong, TY
    Uesugi, K
    Suemune, I
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (07) : 900 - 906
  • [32] Growth and characterization of (Zn,Sn,Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy
    Toyota, H.
    Terauchi, T.
    Hidaka, S.
    Kato, T.
    Uchitomi, N.
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (02):
  • [33] InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy
    He, Jun
    Yadavalli, Kameshwar
    Zhao, Zuoming
    Li, Ning
    Hao, Zhibiao
    Wang, Kang L.
    Jacob, Ajey P.
    [J]. NANOTECHNOLOGY, 2008, 19 (45)
  • [34] Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy
    Young-Woo Ok
    Chel-Jong Choi
    Tae-Yeon Seong
    K. Uesugi
    I. Suemune
    [J]. Journal of Electronic Materials, 2001, 30 : 900 - 906
  • [35] ZnTe nanowires grown catalytically on GaAs (001) substrates by molecular beam epitaxy
    Janik, E.
    Sadowski, J.
    Dluzewski, P.
    Kret, S.
    Presz, A.
    Baczewski, L. T.
    Lusakowska, E.
    Wrobel, J.
    Karczewski, G.
    Wojtowicz, T.
    [J]. PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 103 - +
  • [36] Characterization of delta-doped GaAs grown by molecular beam epitaxy
    Gurnik, P
    Srnánek, R
    McPhail, DS
    Chater, RJ
    Fearn, S
    Harmatha, L
    Kordos, P
    Geurts, J
    Lalinsky, T
    [J]. EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 9 - 14
  • [37] Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be
    Ichiryu, D
    Sano, E
    Horikoshi, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A): : 6583 - 6586
  • [38] Characteristics of molecular beam epitaxy grown GaAs simultaneously doped with Si and Be
    [J]. Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 A (6583-6586):
  • [39] Thermal stability of beryllium atoms in Be δ-doped GaAs grown on GaAs(111)A by molecular beam epitaxy
    Hirai, M.
    Ohnishi, H.
    Fujita, K.
    Watanabe, T.
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1996, 35 (6 B):
  • [40] TRANSIENT PHOTOCONDUCTIVITY IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
    WERNER, A
    MOUSTAKAS, TD
    KUNST, M
    [J]. III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 461 - 466
12345