Thin InSb films on GaAs substrates by molecular beam epitaxy

被引：0
|
作者：
Li, Zhanguo [1 ]
Liu, Guojun [1 ]
Li, Mei [1 ]
You, Minghui [1 ]
Li, Lin [1 ]
Xiong, Min [1 ]
Wang, Yong [1 ]
Zhang, Baoshun [1 ]
Wang, Xiaohua [1 ]
机构：
[1] Changchun University of Science and Technology, Changchun 130022, China
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 1 PART 2期
关键词：
Molecular beam epitaxy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：558 / 560
相关论文
共 50 条
  • [1] Thin InSb films on GaAs substrates by molecular beam epitaxy
    Li, Zhanguo
    Liu, Guojun
    Li, Mei
    You, Minghui
    Li, Lin
    Xiong, Min
    Wang, Yong
    Zhang, Baoshun
    Wang, Xiaohua
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 558 - 560
  • [2] Surface morphology of highly mismatched InSb films grown on GaAs substrates by molecular beam epitaxy
    Xiong, Min
    Li, Meicheng
    Zhao, Liancheng
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (02): : R80 - R82
  • [3] MOLECULAR-BEAM EPITAXY GROWTH OF INSB FILMS ON GAAS
    DAVIS, JL
    THOMPSON, PE
    APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2235 - 2237
  • [4] Growth of atomically smooth ultra-thin InSb layers on GaAs substrates by molecular beam epitaxy
    Kanisawa, K
    Yamaguchi, H
    Hirayama, Y
    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 131 - 134
  • [5] Growth of InSb thin films on GaAs(100) substrates by flash evaporation epitaxy
    Szwadowski, M
    Berus, T
    Borowska, A
    Czajka, R
    Zimniak, M
    E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 351 - 354
  • [6] MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INSB LAYERS ON GAAS SUBSTRATES
    SODERSTROM, JR
    CUMMING, MM
    YAO, JY
    ANDERSSON, TG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 337 - 343
  • [7] Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers
    李勇
    李晓明
    郝瑞亭
    郭杰
    庄玉
    崔素宁
    魏国帅
    马晓乐
    王国伟
    徐应强
    牛智川
    王耀
    Chinese Physics B, 2021, (02) : 661 - 665
  • [8] Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*
    Li, Yong
    Li, Xiao-Ming
    Hao, Rui-Ting
    Guo, Jie
    Zhuang, Yu
    Cui, Su-Ning
    Wei, Guo-Shuai
    Ma, Xiao-Le
    Wang, Guo-Wei
    Xu, Ying-Qiang
    Niu, Zhi-Chuan
    Wang, Yao
    CHINESE PHYSICS B, 2021, 30 (02)
  • [9] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
    VASQUEZ, RP
    LEWIS, BF
    GRUNTHANER, FJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794
  • [10] PREPARATION OF INSB SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
    LIU, WK
    YUEN, WT
    STRADLING, RA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1539 - 1545
12345