Imprint characteristics of (Bi,La)4Ti3O12-layered perovskite ferroelectric thin films

被引：0
|
作者：
Lee, SS
Hong, SK
机构：
[1] Hynix Semicond Inc, Flash Div, Ichon 467701, Kyoungki Do, South Korea
[2] Hynix Semicond Inc, Memory R&D Div, Ichon 467701, Kyoungki Do, South Korea
来源：
INTEGRATED FERROELECTRICS | 2004年 / 65卷
关键词：
BLT; imprint; ferroelectic thin films; FeRAM;
D O I：
10.1080/10584580490892935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the imprint characteristics of 100 nm thick-(Bi,La)(4)Ti3O12, BLT, films prepared both using metal-organic decomposition (MOD) and Sol-Gel spin coating process after the storage for 2 hours to 96 hours at high temperatures of 85degreesC, 125degreesC, 150degreesC, and 175degreesC, respectively. Reading and writing operation were performed at 25degreesC and 90degreesC, respectively. From the results, It was revealed that the imprint characteristics of MOD-BLT and Sol-Gel BLT are almost similar properties.
引用
收藏
页码：141 / 147
页数：7
相关论文
共 50 条
  • [31] Heterolayered ferroelectric Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O12 thin films
    Sim, C. H.
    Wang, J.
    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 76 - 79
  • [32] Epitaxial growth of multilayered (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 ferroelectric thin films with different orientations
    Dinghua Bao
    Xinhua Zhu
    Marin Alexe
    Dietrich Hesse
    Journal of Electroceramics, 2008, 21 : 72 - 77
  • [33] Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films
    Yue, Wenfeng
    Cai, Yali
    Guo, Quansheng
    Wang, Dawei
    Jia, Tingting
    CERAMICS-SWITZERLAND, 2024, 7 (01): : 29 - 38
  • [34] Epitaxial growth of multilayered (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 ferroelectric thin films with different orientations
    Bao, Dinghua
    Zhu, Xinhua
    Alexe, Marin
    Hesse, Dietrich
    JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 72 - 77
  • [35] Aqueous CSD of ferroelectric Bi3.5La0.5Ti3O12 (BLT) thin films
    Hardy, A
    Nelis, D
    Vanhoyland, G
    van Bael, MK
    Mullens, J
    van Poucke, LC
    D'Haen, J
    Wouters, DJ
    INTEGRATED FERROELECTRICS, 2004, 62 : 205 - 209
  • [36] Synthesis and characteristics of Bi3.25La0.75Ti3O12 ferroelectric thin films by Sol-Gel technology
    Wang Hua
    Ren Ming-Fang
    ACTA PHYSICA SINICA, 2006, 55 (06) : 3152 - 3156
  • [37] Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method
    Simoes, A. Z.
    Ramirez, M. A.
    Stojanovic, B. D.
    Marinkovic, Z.
    Longo, E.
    Varela, J. A.
    ADVANCED MATERIALS FORUM III, PTS 1 AND 2, 2006, 514-516 : 212 - 215
  • [38] A controllable photoresponse and photovoltaic performance in Bi4Ti3O12 ferroelectric thin films
    He, Hongcai
    He, Zhaoling
    Jiang, Zhuolin
    Wang, Jing
    Liu, Tao
    Wang, Ning
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 694 : 998 - 1003
  • [39] Ferroelectric properties of Sm-doped Bi4Ti3O12 thin films
    Chen, M
    Liu, ZL
    Wang, Y
    Yao, KL
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (06): : 1166 - 1171
  • [40] Ferroelectric Bi4Ti3O12 thin films with C-axis orientation
    Tsukamoto, T
    Kakimi, A
    Fujihashi, G
    Togami, T
    Ando, S
    Okamura, S
    INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 257 - 258
12345