Ferroelectric and dielectric characteristics of Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method

被引：3
|
作者：
Simoes, A. Z.
Ramirez, M. A.
Stojanovic, B. D.
Marinkovic, Z.
Longo, E.
Varela, J. A.
机构：
[1] UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
[2] Univ Belgrade, Ctr Multidisciplinary Studies, Belgrade 11001, Serbia Monteneg
[3] UFSCar, Dept Chem, Sao Carlos, SP, Brazil
来源：
ADVANCED MATERIALS FORUM III, PTS 1 AND 2 | 2006年 / 514-516卷
关键词：
thin films; bismuth titanate; dielectric properties; ferroelectric properties;
D O I：
10.4028/www.scientific.net/MSF.514-516.212
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ferroelectric properties and leakage current mechanisms of preferred oriented Bi3.25La0.75Ti3O12 (BLT) thin films deposited on La0.5Sr0.5CoO3 (LSCO) by the polymeric precursor method were investigated. Atomic force microscopy indicates that the deposited films exhibit a dense microstructure with a rather smooth surface morphology. The improved ferroelectric and leakage current characteristics can be ascribed to the plate-like grains of the BLT films.
引用
收藏
页码：212 / 215
页数：4
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