Imprint characteristics of (Bi,La)4Ti3O12-layered perovskite ferroelectric thin films

被引：0
|
作者：
Lee, SS
Hong, SK
机构：
[1] Hynix Semicond Inc, Flash Div, Ichon 467701, Kyoungki Do, South Korea
[2] Hynix Semicond Inc, Memory R&D Div, Ichon 467701, Kyoungki Do, South Korea
来源：
INTEGRATED FERROELECTRICS | 2004年 / 65卷
关键词：
BLT; imprint; ferroelectic thin films; FeRAM;
D O I：
10.1080/10584580490892935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the imprint characteristics of 100 nm thick-(Bi,La)(4)Ti3O12, BLT, films prepared both using metal-organic decomposition (MOD) and Sol-Gel spin coating process after the storage for 2 hours to 96 hours at high temperatures of 85degreesC, 125degreesC, 150degreesC, and 175degreesC, respectively. Reading and writing operation were performed at 25degreesC and 90degreesC, respectively. From the results, It was revealed that the imprint characteristics of MOD-BLT and Sol-Gel BLT are almost similar properties.
引用
收藏
页码：141 / 147
页数：7
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