All-optical AND gate based on Raman effect in silicon-on-insulator waveguide

被引：1
|
作者：
Passaro, Vittorio M. N.
De Leonardis, Francesco
机构：
[1] Politecn Bari, Dipartimento Ingn Ambiente & Sviluppo Sostenibile, I-74100 Taranto, Italy
[2] Politecn Bari, Dipartimento Elettrotecn & Elettron, I-70125 Bari, Italy
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2006年 / 38卷 / 9-11期
关键词：
integrated optics; nonlinear optics; silicon-on-insulator technology; Raman scattering; all-optical gate;
D O I：
10.1007/s11082-006-9021-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.
引用
收藏
页码：877 / 888
页数：12
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