Modelling of a DBR laser based on Raman effect in a silicon-on-insulator rib waveguide

被引：7
|
作者：
De Leonardis, Francesco [1 ]
Dimastrodonato, Valeria [2 ]
Passaro, Vittorio M. N. [2 ]
机构：
[1] Politecn Bari, Dipartimento Ingn Ambiente Sviluppo Sostenibile, Photon Res Grp, I-74100 Taranto, Italy
[2] Politecn Bari, Dipartimento Elettrotecn & Elettron, Photon Res Grp, I-70125 Bari, Italy
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 06期
关键词：
D O I：
10.1088/0268-1242/23/6/064008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, third-order nonlinearities in silicon-on-insulator rib waveguides are investigated to obtain complete modelling, describing the behaviour of a stimulated Raman scattering based laser. The simulations of a distributed Bragg reflector laser operation in a time domain allow for the first time to study in detail the dependence of threshold and output powers on different device parameters. Both continuous wave and pulsed laser operations are theoretically demonstrated, as well as their dependence on device parameters.
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收藏
页数：10
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