Modeling and design of an all-optical switch based on Raman effect in optimized silicon-on-insulator waveguides

被引：0
|
作者：
Passaro, VMN [1 ]
De Leonardis, F [1 ]
机构：
[1] Politecn Bari, Dipartimento Elettrotecn & Elettron, I-70125 Bari, Italy
来源：
PROCEEDINGS OF WFOPC 2005: 4TH IEEE/LEOS WORKSHOP ON FIBRES AND OPTICAL PASSIVE COMPONENTS | 2005年
关键词：
D O I：
10.1109/WFOPC.2005.1462140
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Raman gain, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect are investigated theoretically in silicon-on-insulator waveguides. The influence of the rib waveguide sizes on the time-space evolution of the pump pulse and Stokes wave is presented. Finally, the application of the nonlinear effects in silicon to realise an all-optical switch is proposed.
引用
收藏
页码：281 / 286
页数：6
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