Room temperature particle detectors based on indium phosphide

被引：2

作者：

Yatskiv, R. ^{[1
]}

Grym, J. ^{[1
]}

Zdansky, K. ^{[1
]}

Pekarek, L. ^{[1
,2
]}

机构：

[1] Acad Sci Czech Republic, Inst Photon & Elect, CR-18251 Prague 8, Czech Republic

[2] Acad Sci Czech Republic, Inst Phys, Prague 18221 8, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 612卷 / 02期

关键词：

Semi-insulating InP; High purity InP layers; Particle detector; SEMIINSULATING INP; TI; PERFORMANCE; GAMMA; ZN;

D O I：

10.1016/j.nima.2009.10.172

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from Am-241 source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：334 / 337

页数：4

共 50 条

[31] Low-temperature particle detectors
Booth, NE
Cabrera, B
Fiorini, E
ANNUAL REVIEW OF NUCLEAR AND PARTICLE SCIENCE, 1996, 46 : 471 - 532
[32] Room temperature semiconductor detectors for safeguards measurements
Arlt, R
Rundquist, DE
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2): : 455 - 461
[33] Room temperature semiconductor detectors for nuclear security
Johns, Paul M.
Nino, Juan C.
JOURNAL OF APPLIED PHYSICS, 2019, 126 (04)
[34] Novel IR detectors operate at room temperature
Wauters, J
LASER FOCUS WORLD, 1998, 34 (05): : 175 - +
[35] A LOW-TEMPERATURE PROCESS FOR VAPOR ETCHING OF INDIUM-PHOSPHIDE
CHANG, HL
MEINERS, LG
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06): : 1625 - 1630
[36] Room Temperature Performance of Thallium Bromide Detectors
Motakef, Shariar
Datta, Amlan
2015 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2015,
[37] Femtosecond carrier dynamics in low-temperature-grown indium phosphide
Appl Phys Lett, 14 (1821):
[38] Silicon MOSFETs As Room Temperature Terahertz Detectors
Videlier, H.
Nadar, S.
Dyakonova, N.
Sakowicz, M.
Van Dam, T. Trinh
Teppe, F.
Coquillat, D.
Knap, W.
Denorme, S.
Skotnicki, T.
Peiris, J. M.
Lyonnet, J.
16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
[39] Recent progress in CdZnTe based room temperature detectors for nuclear radiation monitoring
Alam, Md Didarul
Nasim, Syeda S.
Hasan, Samiul
PROGRESS IN NUCLEAR ENERGY, 2021, 140
[40] Room temperature ultrafast InGaAs Schottky diode based detectors for terahertz spectroscopy
Daghestani, Nart
Parow-Souchon, Kai
Pardo, Diego
Liu, Hairui
Brewster, Nick
Frogley, Mark
Cinque, Gianfelice
Alderman, Byron
Huggard, Peter G.
INFRARED PHYSICS & TECHNOLOGY, 2019, 99 : 240 - 247

← 1 2 3 4 5 →