Room temperature particle detectors based on indium phosphide

被引：2
|
作者：
Yatskiv, R. [1 ]
Grym, J. [1 ]
Zdansky, K. [1 ]
Pekarek, L. [1 ,2 ]
机构：
[1] Acad Sci Czech Republic, Inst Photon & Elect, CR-18251 Prague 8, Czech Republic
[2] Acad Sci Czech Republic, Inst Phys, Prague 18221 8, Czech Republic
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 612卷 / 02期
关键词：
Semi-insulating InP; High purity InP layers; Particle detector; SEMIINSULATING INP; TI; PERFORMANCE; GAMMA; ZN;
D O I：
10.1016/j.nima.2009.10.172
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid-encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p-n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from Am-241 source at room temperature. Better noise properties were achieved for detectors with p-n junctions due to better quality contacts on p-type layers. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：334 / 337
页数：4
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